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Title: The temperature dependence of atomic incorporation characteristics in growing GaInNAs films

We have systematically studied the temperature dependence of incorporation characteristics of nitrogen (N) and indium (In) in growing GaInNAs films. With the implementation of Monte-Carlo simulation, the low N adsorption energy (−0.10 eV) is demonstrated. To understand the atomic incorporation mechanism, temperature dependence of interactions between Group-III and V elements are subsequently discussed. We find that the In incorporation behaviors rather than that of N are more sensitive to the T{sub g}, which can be experimentally verified by exploring the compositional modulation and structural changes of the GaInNAs films by means of high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscope, and secondary ion mass spectroscopy.
Authors:
; ; ;  [1] ; ;  [1] ;  [2]
  1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22413068
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ADSORPTION; COMPUTERIZED SIMULATION; EV RANGE; FILMS; GALLIUM ARSENIDES; INDIUM; INDIUM NITRIDES; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MONTE CARLO METHOD; NITROGEN; SCANNING ELECTRON MICROSCOPY; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY