The temperature dependence of atomic incorporation characteristics in growing GaInNAs films

Journal Article · Sat Feb 07 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4907569· OSTI ID:22413068

Li, Jingling; Gao, Fangliang; Wen, Lei; Zhou, Shizhong ^[1]; Zhang, Shuguang; Li, Guoqiang ^[1]

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1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640 (China)

We have systematically studied the temperature dependence of incorporation characteristics of nitrogen (N) and indium (In) in growing GaInNAs films. With the implementation of Monte-Carlo simulation, the low N adsorption energy (−0.10 eV) is demonstrated. To understand the atomic incorporation mechanism, temperature dependence of interactions between Group-III and V elements are subsequently discussed. We find that the In incorporation behaviors rather than that of N are more sensitive to the T{sub g}, which can be experimentally verified by exploring the compositional modulation and structural changes of the GaInNAs films by means of high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscope, and secondary ion mass spectroscopy.

• OSTI ID: 22413068
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
COMPUTERIZED SIMULATION
EV RANGE
FILMS
GALLIUM ARSENIDES
INDIUM
INDIUM NITRIDES
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MONTE CARLO METHOD
NITROGEN
SCANNING ELECTRON MICROSCOPY
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY