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Title: Erratum: “High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115, 174507 (2014)]

No abstract prepared.
Authors:
; ; ; ; ; ;  [1]
  1. Advanced Technology Development Center, IIT Kharagpur, Kharagpur 721302 (India)
Publication Date:
OSTI Identifier:
22413029
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; COMPUTERIZED SIMULATION; CONCENTRATION RATIO; GALLIUM NITRIDES; HETEROJUNCTIONS; LAYERS; RESOLUTION; SAPPHIRE; X-RAY DIFFRACTION