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Title: A study of transport properties in Cu and P doped ZnSb

ZnSb samples have been doped with copper and phosphorus and sintered at 798 K. Electronic transport properties are interpreted as being influenced by an impurity band close to the valence band. At low Cu dopant concentrations, this impurity band degrades the thermoelectric properties as the Seebeck coefficient and effective mass are reduced. At carrier concentrations above 1 × 10{sup 19 }cm{sup −3}, the Seebeck coefficient in Cu doped samples can be described by a single parabolic band.
Authors:
; ;  [1]
  1. Department of Physics, University of Oslo, Blindern, P.O. Box 1048, 0316 Oslo (Norway)
Publication Date:
OSTI Identifier:
22413025
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONIDES; CHARGE CARRIERS; CONCENTRATION RATIO; COPPER; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; PHOSPHORUS; THERMOELECTRIC PROPERTIES; VALENCE; ZINC COMPOUNDS