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Title: Epi-cleaning of Ge/GeSn heterostructures

We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.
Authors:
; ; ;  [1] ; ;  [2] ;  [3] ;  [3] ;  [4] ;  [1] ;  [5]
  1. Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Rome (Italy)
  2. Peter Grünberg Institute 9 and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, Juelich 52425 (Germany)
  3. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
  4. (Germany)
  5. (Oder) (Germany)
Publication Date:
OSTI Identifier:
22413013
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; CATALYTIC CRACKING; FILAMENTS; GERMANIUM; HETEROJUNCTIONS; HYDROGEN; ION MICROPROBE ANALYSIS; IRRADIATION; MASS SPECTROSCOPY; PHOTOELECTRON SPECTROSCOPY; RAMAN SPECTROSCOPY; STRAINS; TENSILE PROPERTIES; TIN; TUNGSTEN; X-RAY SPECTROSCOPY