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Title: High pressure study of B{sub 12}As{sub 2}: Electrical transport behavior and the role of grain boundaries

Using a diamond anvil cell, the evolutions of alternate-current impedance spectra and direct- current resistivity in B{sub 12}As{sub 2} have been investigated up to 51.9 GPa. The results provide evidence for the existence of grain and grain boundary effects that are separated in the frequency region. The grain boundary resistance shows a relatively smaller contribution to the total resistance above 16.8 GPa. By using the double-Schottky barrier model, the space charge potential was obtained. A pressure-induced inversion of charge defect concentration in the space charge layer was found at 20.7 GPa. The high-temperature resistivity measurements indicate that the transport activation energy is determined by defect energy levels in the band gap.
Authors:
 [1] ;  [2] ;  [2] ; ;  [3] ;  [4] ; ; ; ; ;  [1]
  1. Department of Mechanical Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)
  2. (China)
  3. State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012 (China)
  4. Department of Chemical Engineering, University of Maryland, College Park, Maryland 20742 (United States)
Publication Date:
OSTI Identifier:
22413011
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CONCENTRATION RATIO; DEPLETION LAYER; DIAMONDS; DIRECT CURRENT; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; ENERGY GAP; ENERGY LEVELS; GRAIN BOUNDARIES; IMPEDANCE; PRESSURE DEPENDENCE; SPACE CHARGE