Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices

Matveyev, Yu.; Zenkevich, A.; Egorov, K.; Markeev, A.

doi:10.1063/1.4905792

Title: Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices

Full Record
Other Related Research

Abstract

Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO{sub 2}/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO{sub 2} in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO{sub 2}. The memristive properties of ALD grown TiN/HfO{sub 2}/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware.

Authors:

Matveyev, Yu.; Zenkevich, A. ^[1]; Egorov, K.; Markeev, A. ^[1]

Moscow Institute of Physics and Technology, 141700 Moscow Region (Russian Federation)

Publication Date:: Wed Jan 28 00:00:00 EST 2015

OSTI Identifier:: 22413005

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; HAFNIUM OXIDES; INTERFACES; NEURAL NETWORKS; OXYGEN; PLASTICITY; TITANIUM NITRIDES; TUNNEL EFFECT; VACANCIES

Citation Formats


                    Matveyev, Yu., Zenkevich, A., NRNU “Moscow Engineering Physics Institute”, 115409 Moscow, Egorov, K., and Markeev, A. Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4905792.

Copy to clipboard


                    Matveyev, Yu., Zenkevich, A., NRNU “Moscow Engineering Physics Institute”, 115409 Moscow, Egorov, K., & Markeev, A. Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices.  United States.  https://doi.org/10.1063/1.4905792

Copy to clipboard


                    Matveyev, Yu., Zenkevich, A., NRNU “Moscow Engineering Physics Institute”, 115409 Moscow, Egorov, K., and Markeev, A. 2015.  
        "Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices".  United States.  https://doi.org/10.1063/1.4905792.

Copy to clipboard


                    
@article{osti_22413005,

  title        = {Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices},

  author       = {Matveyev, Yu. and Zenkevich, A. and NRNU “Moscow Engineering Physics Institute”, 115409 Moscow and Egorov, K. and Markeev, A.},

  abstractNote = {Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO{sub 2}/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO{sub 2} in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO{sub 2}. The memristive properties of ALD grown TiN/HfO{sub 2}/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware.},

  doi          = {10.1063/1.4905792},

  url          = {https://www.osti.gov/biblio/22413005},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 4,

  volume       = 117,

  place        = {United States},

  year         = {Wed Jan 28 00:00:00 EST 2015},

  month        = {Wed Jan 28 00:00:00 EST 2015}

}

Copy to clipboard

Journal Article:

https://doi.org/10.1063/1.4905792

Other availability

Find in Google Scholar

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Memristive behavior in a junctionless flash memory cell

Journal Article Orak, Ikram; Ürel, Mustafa; Dana, Aykutlu; ... - Applied Physics Letters

We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented device mode, which we refer to as the flashristor mode, potentially allows greater control over the memristive properties, allowing rational design. The mode is demonstrated using a depletion type n-channel ZnO transistor grown by atomic layer deposition (ALD), with HfO{sub 2} as the tunnel dielectric, Al{sub 2}O{sub 3} as the control dielectric, and non-stoichiometric silicon nitride as the charge storage layer. The device exhibits themore »« less
https://doi.org/10.1063/1.4922624
Memristive Ion Channel-Doped Biomembranes as Synaptic Mimics

Journal Article Najem, Joseph; Taylor, Graham; Weiss, Ryan; ... - ACS Nano

Solid-state neuromorphic systems based on transistors or memristors have yet to achieve the interconnectivity, performance, and energy efficiency of the brain due to excessive noise, undesirable material properties, and nonbiological switching mechanisms. Here in this work, we demonstrate that an alamethicin-doped, synthetic biomembrane exhibits memristive behavior, emulates key synaptic functions including paired-pulse facilitation and depression, and enables learning and computing. Unlike state-of-the-art devices, our two-terminal, biomolecular memristor features similar structure (biomembrane), switching mechanism (ion channels), and ionic transport modality as biological synapses while operating at considerably lower power. The reversible and volatile voltage-driven insertion of alamethicin peptides into an insulatingmore »« less
Cited by 73
https://doi.org/10.1021/acsnano.8b01282

Full Text Available
Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO₂ Memristor

Journal Article Jiang, Hao; Han, Lili; Lin, Peng; ... - Scientific Reports

Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated that metal cations could also play an important role, but no direct physical characterizations have been reported yet. We report a Ta/HfO₂/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention. We also programmed the device to 24 discrete resistance levels, and also demonstrated over a million (220) epochs of potentiation and depression,more »« less
Cited by 128
https://doi.org/10.1038/srep28525

Full Text Available
A Hardware and Software Co-design Framework for Energy Efficient Neuromorphic Systems

Technical Report Li, Hai; Taylor, Brady

Neuromorphic systems can be realized by a variety of algorithms and architectures. A common understanding is that spiking neuromorphic designs, which encode information into spatio-temporal spiking events, are both a biologically-accurate and efficient way of processing information. However, representing the information through timing relationships induces sophisticated circuit designs in traditional CMOS-based implementations. In recent years, high-capacity resistive memory (RRAM, aka, memristor) has demonstrated great potential in mimicking synaptic behaviors. Several RRAM-based spiking neuromorphic designs exist, most of which focus on rate coding schemes. These designs simplify circuit implementations of neuron models and explore challenges such as unsatisfactory speed, resolution, andmore »« less
https://doi.org/10.2172/1985762

Full Text Available
Heterosynaptic plasticity in biomembrane memristors controlled by pH

Journal Article McClintic, William; Scott, Haden; Moore, Nick; ... - MRS Bulletin

Abstract In biology, heterosynaptic plasticity maintains homeostasis in synaptic inputs during associative learning and memory, and initiates long-term changes in synaptic strengths that nonspecifically modulate different synapse types. In bioinspired neuromorphic circuits, heterosynaptic plasticity may be used to extend the functionality of two-terminal, biomimetic memristors. In this article, we explore how changes in the pH of droplet interface bilayer aqueous solutions modulate the memristive responses of a lipid bilayer membrane in the pH range 4.97–7.40. Surprisingly, we did not find conclusive evidence for pH-dependent shifts in the voltage thresholds ( V* ) needed for alamethicin ion channel formation in themore »« less
https://doi.org/10.1557/s43577-022-00344-z

Similar Records