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Title: Method for extracting relevant electrical parameters from graphene field-effect transistors using a physical model

Due to its intrinsic high mobility, graphene has proved to be a suitable material for high-speed electronics, where graphene field-effect transistor (GFET) has shown excellent properties. In this work, we present a method for extracting relevant electrical parameters from GFET devices using a simple electrical characterization and a model fitting. With experimental data from the device output characteristics, the method allows to calculate parameters such as the mobility, the contact resistance, and the fixed charge. Differentiated electron and hole mobilities and direct connection with intrinsic material properties are some of the key aspects of this method. Moreover, the method output values can be correlated with several issues during key fabrication steps such as the graphene growth and transfer, the lithographic steps, or the metalization processes, providing a flexible tool for quality control in GFET fabrication, as well as a valuable feedback for improving the material-growth process.
Authors:
 [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2] ;  [2]
  1. Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Madrid 28040 (Spain)
  2. (Spain)
Publication Date:
OSTI Identifier:
22413003
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONS; FABRICATION; FEEDBACK; FIELD EFFECT TRANSISTORS; GRAPHENE; HOLE MOBILITY; VELOCITY