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Title: Fabrication and orientation control of highly cation-ordered epitaxial PbSc{sub 0.5}Ta{sub 0.5}O{sub 3} thin films on Si (100)

Highly cation-ordered (100) and (110)-oriented PbSc{sub 0.5}Ta{sub 0.5}O{sub 3} (PST) films were deposited on buffered Si (100) substrates using pulsed laser deposition. Switching of crystal orientation from (100) to (110) was achieved by replacing the Si (100)/ZrO2:Y2O3 (100)/CeO2 (100)/LaNiO3 (100)/PST (100) heterostructure with Si (100)/ZrO2:Y2O3 (YSZ) (100)/SrRuO3 (110)/PST (110). The out-of-plane and in-plane crystal orientation and internal microstructure of (001) and (110) PST films were analyzed in detail by X-ray diffraction, pole figure measurements, and transmission electron microscopy. XRD superstructure reflections indicate that both (100) and (110) PST films are highly cation-ordered and transmission electron microscopy measurements show nano-domains of 15 nm size. The electrical measurements show that the PST films are ferroelectric and that the ferroelectric properties are linked to the microstructure. We have demonstrated the successful integration of PST films on Si substrates with control on growth orientation; this approach can be extended to other oxides to be integrated on silicon substrates for future device applications.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [1]
  1. Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany)
  2. (Netherlands)
  3. (United Kingdom)
Publication Date:
OSTI Identifier:
22412997
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CERIUM OXIDES; CRYSTAL STRUCTURE; CRYSTALS; ENERGY BEAM DEPOSITION; EPITAXY; FERROELECTRIC MATERIALS; LASER RADIATION; LEAD COMPOUNDS; MICROSTRUCTURE; PULSED IRRADIATION; SCANDIUM COMPOUNDS; SILICON; SUBSTRATES; TANTALATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; YTTRIUM OXIDES; ZIRCONIUM OXIDES