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Title: Enhancement of critical current density in YBa{sub 2}Cu{sub 3}O{sub 7} films using a semiconductor ion implanter

An up-to-11-fold enhancement was observed in the in-magnetic-field critical current density (J{sub c}) in epitaxial YBa{sub 2}Cu{sub 3}O{sub 7} films on CeO{sub 2}-buffered SrTiO{sub 3} substrates by irradiation with 200- to 750-keV Si and 200-keV B ions. This enhancement indicates that ion beams in the range of 100 to 1000‚ÄČkeV, which are widely used for modifying the conductive properties of semiconducting materials, can significantly improve the vortex-pinning properties in second-generation superconducting wires. Also observed was a scaling relation between J{sub c} and the density of the vacancies (i.e., of Frenkel pairs) produced by the nuclear collisions between incident ions and target atoms, suggesting that this density is a key parameter in determining the magnitude of the J{sub c} enhancement. Also observed was an additional J{sub c} enhancement by a modification of the depth distribution of the vacancies, thus demonstrating the flexibility in controlling artificial pinning center (APC) properties in physical APC introduction.
Authors:
; ; ; ; ; ; ;  [1]
  1. National Institute of Advanced Industrial Science and Technology, 3058565 Tsukuba (Japan)
Publication Date:
OSTI Identifier:
22412994
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BARIUM COMPOUNDS; BORON IONS; CERIUM OXIDES; CRITICAL CURRENT; CUPRATES; CURRENT DENSITY; EPITAXY; FILMS; ION IMPLANTATION; IRRADIATION; MAGNETIC FIELDS; SEMICONDUCTOR MATERIALS; SPATIAL DISTRIBUTION; STRONTIUM TITANATES; SUBSTRATES; SUPERCONDUCTING WIRES; VACANCIES; VORTICES; YTTRIUM COMPOUNDS