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Title: Spin and charge transport in double-junction Fe/MgO/GaAs/MgO/Fe heterostructures

We present theoretical and experimental results on tunneling current in single Fe/MgO/GaAs and double Fe/MgO/GaAs/MgO/Fe tunnel junctions. The charge and spin currents are calculated as a function of external voltage for different sets of parameters characterizing the semiconducting GaAs layer. Transport characteristics of a single Fe/MgO/GaAs junction reveal typical diode as well as spin diode features. The results of numerical calculations are compared with current-voltage characteristics measured experimentally for double tunnel junction structures, and a satisfactory agreement of the theoretical and experimental results has been achieved.
Authors:
;  [1] ;  [1] ;  [2] ;  [3] ;  [4] ; ; ;  [5]
  1. Department of Physics, Rzeszów University of Technology, Al. Powstańców Warszawy 6, 35-959 Rzeszów (Poland)
  2. (Portugal)
  3. Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland)
  4. (Poland)
  5. Institute for Applied Physics, University of Hamburg, Jungiusstraße 11, 20355 Hamburg (Germany)
Publication Date:
OSTI Identifier:
22412991
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE TRANSPORT; COMPARATIVE EVALUATIONS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; HETEROJUNCTIONS; IRON; LAYERS; MAGNESIUM OXIDES; SPIN; TUNNEL EFFECT