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Title: A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

The manganese induced magnetic, electrical, and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature, and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at. %. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magnetoresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at. % Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP, and InMnAs; however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.
Authors:
; ; ; ;  [1] ; ;  [1] ;  [2] ;  [3] ; ; ;  [4]
  1. Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden (Germany)
  2. (Germany)
  3. Helmholtz-Zentrum Berlin für Materialien und Energie, Wilhelm-Conrad-Röntgen-Campus BESSY II, D-12489 Berlin (Germany)
  4. Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz (Germany)
Publication Date:
OSTI Identifier:
22412990
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BINDING ENERGY; CONCENTRATION RATIO; CURIE POINT; ELECTRONIC STRUCTURE; ELECTRONS; FERMI LEVEL; FERROMAGNETIC MATERIALS; HYSTERESIS; INDIUM PHOSPHIDES; MAGNETIZATION; MAGNETORESISTANCE; MANGANESE ARSENIDES; MANGANESE COMPOUNDS; MANGANESE IONS; SPIN ORIENTATION; VALENCE; VANADIUM COMPOUNDS