A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

Journal Article · Wed Jan 28 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4906562· OSTI ID:22412990

Khalid, M.; Hübner, R.; Baehtz, C.; Skorupa, W.; Zhou, Shengqiang ^[1]; Gao, Kun; Helm, M. ^[1]; Weschke, E. ^[2]; Gordan, O.; Salvan, G.; Zahn, D. R. T. ^[3]

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1. Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden (Germany)
2. Helmholtz-Zentrum Berlin für Materialien und Energie, Wilhelm-Conrad-Röntgen-Campus BESSY II, D-12489 Berlin (Germany)
3. Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz (Germany)

The manganese induced magnetic, electrical, and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature, and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at. %. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magnetoresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at. % Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP, and InMnAs; however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.

• OSTI ID: 22412990
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BINDING ENERGY
CONCENTRATION RATIO
CURIE POINT
ELECTRONIC STRUCTURE
ELECTRONS
FERMI LEVEL
FERROMAGNETIC MATERIALS
HYSTERESIS
INDIUM PHOSPHIDES
MAGNETIZATION
MAGNETORESISTANCE
MANGANESE ARSENIDES
MANGANESE COMPOUNDS
MANGANESE IONS
SPIN ORIENTATION
VALENCE
VANADIUM COMPOUNDS