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Title: The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing

We studied the photoluminescence (PL) and structural properties of Ce and Yb co-doped silicon oxide films after high temperature annealing. The PL spectra of Ce{sup 3+} and Yb{sup 3+} ions were sensitive to the structural variation of the films, and the Yb PL intensities were significantly enhanced especially upon 1200 °C annealing. X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, indicated that rare earth silicates and the CeO{sub 2} phase had formed in the oxides. The proportions of the phases varied with the “nominal Si-richness” of the films. Energy transfer from the excited Ce{sup 3+} to Yb{sup 3+} can be inferred from both PL excitation and decay spectra.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. School of Physics, Key Laboratory of Cluster Science of Ministry of Education, Beijing Institute of Technology, Beijing 100081 (China)
  2. Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, Beihang University, Beijing 100191 (China)
  3. Physics Department, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo (Norway)
Publication Date:
OSTI Identifier:
22412980
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTRA; ANNEALING; CERIUM IONS; CERIUM OXIDES; DOPED MATERIALS; EMISSION SPECTRA; ENERGY TRANSFER; EXCITATION; FILMS; PHOTOLUMINESCENCE; SILICATES; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; YTTERBIUM IONS