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Title: Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors

We investigated single electron tunneling through a phosphorus donor-induced quantum dot array in heavily n-doped junctionless nanowire transistor. Seven subpeaks splitting in current oscillations are clearly observed due to the coupling of quantum dot array under the bias voltage below 1.0 mV at the temperature of 6 K. The conduction system can be well described by a two-band Hubbard model. The activation energy of phosphorus donors is tuned by the gate voltage to be 7.0 meV for the lower Hubbard band and 4.4 meV for the upper Hubbard band due to the localization effects below threshold voltage. The evolution of electron behaviors in the quantum dots is identified by adjusting the gate voltage from quantum-dot regime to one-dimensional regime.
Authors:
; ; ; ; ; ;  [1]
  1. Engineering Research Center for Semiconductor Integration Technology, Institute Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22412966
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ACTIVATION ENERGY; COUPLING; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRONS; HUBBARD MODEL; NANOWIRES; N-TYPE CONDUCTORS; ONE-DIMENSIONAL CALCULATIONS; OSCILLATIONS; PHOSPHORUS; QUANTUM DOTS; TRANSISTORS; TUNNEL EFFECT