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Title: Band offset studies in pulse laser deposited Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions

The valence and conduction band offsets of Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions deposited by pulsed laser deposition technique were estimated by X-ray photoelectron, valence band, and UV-visible spectroscopy. Type-II band alignment (staggered gap) with ratios of conduction band to valence band offsets (ΔE{sub C}/ΔE{sub V}) was found to be 0.77 and 0.59 for Zn{sub 0.95}Cd{sub 0.05}O/ZnO and Zn{sub 0.90}Cd{sub 0.10}O/ZnO hetero-structures, respectively, which can be used in longer wavelength regime optoelectronic devices. The higher value of valence band offset as compared to conduction band offset suggests that the transport at interface is mainly due to electrons.
Authors:
; ;  [1] ; ; ;  [2]
  1. Departement of Physics and Materials Science and Engineering, Jaypee Institute of Information Technology, Noida 201307 (India)
  2. UGC-DAE Consortium for Scientific Research, Indore 452001 (India)
Publication Date:
OSTI Identifier:
22412936
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; COMPARATIVE EVALUATIONS; ELECTRIC CONTACTS; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY BEAM DEPOSITION; ENERGY GAP; HETEROJUNCTIONS; INTERFACES; LASER RADIATION; OPTOELECTRONIC DEVICES; PULSED IRRADIATION; VALENCE; ZINC OXIDES