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Title: Engineering the hole confinement for CdTe-based quantum dot molecules

We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmission electron microscopy studies and correlate the results with ensemble quantum dot photoluminescence. Furthermore, we embed the double quantum dots into diode structures and study photoluminescence as a function of bias voltage. We show that in properly engineered structures, it is possible to achieve a resonance of the hole states by tuning the energy levels with electric field. At the resonance, we observe signatures of a formation of a molecular state, hybridized over the two dots.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland)
  2. Facility for Electron Microscopy and Sample Preparation, Center for Microelectronics and Nanotechnology, Faculty of Mathematics and Natural Sciences, University of Rzeszów, ul. Pigonia 1, 35-959 Rzeszów (Poland)
Publication Date:
OSTI Identifier:
22412926
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CADMIUM TELLURIDES; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ENERGY LEVELS; HOLES; LATTICE PARAMETERS; MOLECULES; MORPHOLOGY; PHOTOLUMINESCENCE; QUANTUM DOTS; RESONANCE; TRANSMISSION ELECTRON MICROSCOPY