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Title: Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epitaxy under conditions intended to form 90° misfit dislocations at the InSb-GaAs interface. The complex dielectric function obtained in a wide spectroscopic range from 0.06–4.6 eV shows the critical point transitions E{sub 0}, E{sub 1}, E{sub 1} + Δ{sub 1}, E{sub 0}{sup ′}, and E{sub 2}. The amplitudes, energy transitions, broadenings, and phase angles have been determined using a derivative analysis. Comparing film and bulk critical point results reveal that the epitaxial film is nearly relaxed and has bulk-like optical characteristics.
Authors:
;  [1] ; ; ;  [2]
  1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)
  2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
Publication Date:
OSTI Identifier:
22412908
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; DISLOCATIONS; ELLIPSOMETRY; EV RANGE; FILMS; GALLIUM ARSENIDES; INDIUM ANTIMONIDES; INTERFACES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SUBSTRATES; ULTRAVIOLET RADIATION