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Title: Excitation correlation photoluminescence in the presence of Shockley-Read-Hall recombination

Excitation correlation photoluminescence (ECPL) measurements are often analyzed in the approximation of a cross correlation of charge carrier populations generated by the two delayed pulses. In semiconductors, this approach is valid for a linear non-radiative recombination path, but not for a non-linear recombination rate as in the general Shockley-Read-Hall recombination scenario. Here, the evolution of the ECPL signal was studied for deep trap recombination following Shockley-Read-Hall statistics. Analytic solutions can be obtained for a fast minority trapping regime and steady state recombination. For the steady state case, our results show that the quadratic radiative term plays only a minor role, and that the shape of the measured signal is mostly determined by the non-linearity of the recombination itself. We find that measurements with unbalanced intense pump and probe pulses can directly provide information about the dominant non-radiative recombination mechanism. The signal traces follow the charge carrier concentrations, despite the complex origins of the signal, thus showing that ECPL can be applied to study charge carrier dynamics in semiconductors without requiring elaborate calculations. The model is compared with measurements on a reference sample with alternating layers of InGaAs/InAlAs that were additionally cross-checked with time resolved optical pump terahertz probe measurements andmore » found to be in excellent agreement.« less
Authors:
 [1] ; ;  [2] ; ;  [3] ;  [4]
  1. Joint Laboratory for Ultrafast Dynamics in Solutions and at Interfaces (JULiq), Institute of Methods for Material Development, Helmholtz-Zentrum Berlin, Albert-Einstein-Strasse 15, D-12489 Berlin (Germany)
  2. Institute of Solar Fuels, Helmholtz-Zentrum Berlin, Albert-Einstein-Strasse 15, Berlin D-12489 (Germany)
  3. Department of Physics, Humboldt-Universit├Ąt of Berlin, Newtonstrasse 15, D-12489 Berlin (Germany)
  4. Institute Nano-architectures for Energy Conversion, Helmholtz-Zentrum Berlin, Albert-Einstein-Strasse 15, D-12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22412900
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ANALYTICAL SOLUTION; APPROXIMATIONS; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; CORRELATIONS; EXCITATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; PHOTOLUMINESCENCE; RECOMBINATION; SEMICONDUCTOR MATERIALS; TIME RESOLUTION; TRAPPING