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Title: Detailed investigation of optoelectronic and microstructural properties of plasma polymerized cyclohexane thin films: Dependence on the radiofrequency power

Optical properties of polymerized cyclohexane films deposited by radiofrequency plasma enhanced chemical vapor deposition technique at different radiofrequency powers onto glass and silicon substrates, are studied and correlated with the microstructure of the films, using a combination of atomic force microscopy, Raman and Fourier Transformer Infrared spectroscopy and optical measurements. The optical constants such as refractive index n, dielectric permittivity ε and extinction k and absorption α coefficients, are extracted from transmission and reflection spectra through the commercial software CODE. These constants lead, by using common theoretical models as Cauchy, Lorentz, Tauc and single effective oscillator, to the determination of the static refractive index n{sub s} and permittivity ε{sub s}, the plasma frequency ω{sub p}, the carrier density to effective mass ratio N/m{sub e}{sup *}, the optical conductivity σ{sub oc}, the optical band gap E{sub g} and the oscillation and dispersion energies E{sub 0} and E{sub d}, respectively. We find that n, ε{sub s}, ω{sub p}, N/m{sub e}{sup *}, E{sub d}, increase with radiofrequency power, while E{sub g} and E{sub 0} decrease in the same range of power. These results are well correlated with those obtained from atomic force microscopy, Raman and infrared measurements. They also indicate that the increasemore » of the radiofrequency power promotes the fragmentation of the precursor and increases the carbon C-sp{sup 2} hybridization proportion, which results in an improvement of the optoelectronic properties of the films.« less
Authors:
;  [1] ;  [2] ; ; ;  [1] ; ; ;  [3]
  1. Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, UFR des Sciences d'Amiens, 33 rue Saint Leu, 80039 Amiens Cedex 2 (France)
  2. (Tunisia)
  3. Laboratoire de Matériaux Avancés et Phénomènes Quantiques, Université de Tunis El-Manar, Faculté des Sciences de Tunis, Campus universitaire El-Manar, 1068 Tunis (Tunisia)
Publication Date:
OSTI Identifier:
22412899
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; CARRIER DENSITY; CHEMICAL VAPOR DEPOSITION; CYCLOHEXANE; DIELECTRIC MATERIALS; EFFECTIVE MASS; GLASS; INFRARED SPECTRA; LANGMUIR FREQUENCY; MICROSTRUCTURE; OSCILLATORS; PERMITTIVITY; PLASMA; RADIOWAVE RADIATION; REFRACTIVE INDEX; SILICON; THIN FILMS