Detailed investigation of optoelectronic and microstructural properties of plasma polymerized cyclohexane thin films: Dependence on the radiofrequency power

Journal Article · Sun Jun 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4921703· OSTI ID:22412899

Manaa, C.; Bouaziz, L. ^[1]; Lejeune, M.; Benlahsen, M. ^[1]; Kouki, F.; Mejatty, M.; Bouchriha, H. ^[2]

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1. Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, UFR des Sciences d'Amiens, 33 rue Saint Leu, 80039 Amiens Cedex 2 (France)
2. Laboratoire de Matériaux Avancés et Phénomènes Quantiques, Université de Tunis El-Manar, Faculté des Sciences de Tunis, Campus universitaire El-Manar, 1068 Tunis (Tunisia)

Optical properties of polymerized cyclohexane films deposited by radiofrequency plasma enhanced chemical vapor deposition technique at different radiofrequency powers onto glass and silicon substrates, are studied and correlated with the microstructure of the films, using a combination of atomic force microscopy, Raman and Fourier Transformer Infrared spectroscopy and optical measurements. The optical constants such as refractive index n, dielectric permittivity ε and extinction k and absorption α coefficients, are extracted from transmission and reflection spectra through the commercial software CODE. These constants lead, by using common theoretical models as Cauchy, Lorentz, Tauc and single effective oscillator, to the determination of the static refractive index n{sub s} and permittivity ε{sub s}, the plasma frequency ω{sub p}, the carrier density to effective mass ratio N/m{sub e}{sup *}, the optical conductivity σ{sub oc}, the optical band gap E{sub g} and the oscillation and dispersion energies E{sub 0} and E{sub d}, respectively. We find that n, ε{sub s}, ω{sub p}, N/m{sub e}{sup *}, E{sub d}, increase with radiofrequency power, while E{sub g} and E{sub 0} decrease in the same range of power. These results are well correlated with those obtained from atomic force microscopy, Raman and infrared measurements. They also indicate that the increase of the radiofrequency power promotes the fragmentation of the precursor and increases the carbon C-sp{sup 2} hybridization proportion, which results in an improvement of the optoelectronic properties of the films.

• OSTI ID: 22412899
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ATOMIC FORCE MICROSCOPY
CARRIER DENSITY
CHEMICAL VAPOR DEPOSITION
CYCLOHEXANE
DIELECTRIC MATERIALS
EFFECTIVE MASS
GLASS
INFRARED SPECTRA
LANGMUIR FREQUENCY
MICROSTRUCTURE
OSCILLATORS
PERMITTIVITY
PLASMA
RADIOWAVE RADIATION
REFRACTIVE INDEX
SILICON
THIN FILMS