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Title: Optical and structural properties of sulfur-doped ELOG InP on Si

Optical and structural properties of sulfur-doped epitaxial lateral overgrowth (ELOG) InP grown from nano-sized openings on Si are studied by room-temperature cathodoluminescence and cross-sectional transmission electron microscopy (XTEM). The dependence of luminescence intensity on opening orientation and dimension is reported. Impurity enhanced luminescence can be affected by the facet planes bounding the ELOG layer. Dark line defects formed along the [011] direction are identified as the facet planes intersected by the stacking faults in the ELOG layer. XTEM imaging in different diffraction conditions reveals that stacking faults in the seed InP layer can circumvent the SiO{sub 2} mask during ELOG and extend to the laterally grown layer over the mask. A model for Suzuki effect enhanced stacking fault propagation over the mask in sulfur-doped ELOG InP is constructed and in-situ thermal annealing process is proposed to eliminate the seeding stacking faults.
Authors:
; ; ; ;  [1] ; ;  [2] ; ;  [3]
  1. Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, School of Information and Communication Technology, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden)
  2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
  3. Thin Film Physics Division, Linköping University, 581 83 Linköping (Sweden)
Publication Date:
OSTI Identifier:
22412890
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CATHODOLUMINESCENCE; DIFFRACTION; DOPED MATERIALS; EPITAXY; INDIUM PHOSPHIDES; LAYERS; LINE DEFECTS; NANOSTRUCTURES; SILICON OXIDES; STACKING FAULTS; SULFUR; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY