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Title: Hydrogen accumulation as the origin of delamination at the a-carbon/SiO{sub 2} interface

This work reports the characterization of the interface amorphous carbon (a-C)/SiO{sub 2} by neutron and X-ray reflectometry. Neutrons have shown the existence of an intermediate layer (IL) between the a-C and the SiO{sub 2} layers that was not evidenced by XRR. This IL has been associated with the accumulation of H inside the SiO{sub 2} layer near the interface with the a-C. The characteristics of this layer, in particular, its H-concentration and thickness, seem to be correlated with the weakness of this interface. A plot of the molecular weight as a function of the mass density for the SiO{sub 2} and the IL layers graphically demonstrates the risk of delamination of each sample. The combination of NR and XRR is shown to be a powerful technique in the characterization of layers and interfaces used in the micro/nanoelectronics industry. The same approach can be extended to other interfaces of interest involving hydrogen.
Authors:
; ;  [1] ; ;  [2]
  1. Institut Laue-Langevin, F-38042 Grenoble (France)
  2. STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles (France)
Publication Date:
OSTI Identifier:
22412889
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; CARBON; CONCENTRATION RATIO; HYDROGEN; INTERFACES; LAYERS; MOLECULAR WEIGHT; NANOELECTRONICS; NEUTRON DIFFRACTION; SILICON OXIDES; X-RAY DIFFRACTION