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Title: Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10{sup 13 }cm{sup –2} allowing to considerably shift the threshold voltage to more positive values.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [1] ;  [2]
  1. GaN Device Technology, RWTH Aachen University, 52074 Aachen (Germany)
  2. (Germany)
  3. MTA EK MFA, Konkoly Thege Street 29-33, 1121 Budapest (Hungary)
  4. JARA-Fundamentals of Future Information Technologies, 52425 Jülich (Germany)
  5. (ER-C) and Forschungszentrum Jülich, Peter Grünberg Institut (PGI-5), 52425 Jülich (Germany)
Publication Date:
OSTI Identifier:
22412881
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE DENSITY; ELECTRIC POTENTIAL; FILMS; GALLIUM NITRIDES; INTERFACES; LAYERS; METALS; MORPHOLOGY; OXIDATION; OXIDES; PLASMA; POLYCRYSTALS; SEMICONDUCTOR MATERIALS; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY