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Title: Enhancing secondary yield of a diamond amplifier using a nitrogen layer

A thin nitrogen-doped layer less than 4% of the total thickness in diamond thin film amplifier is shown to reduce losses of generated secondaries to the back contact, generated by a high energy primary electron beam compared to a thin film without the substitutional nitrogen layer modification. Simulation indicates that the losses due to absorption of diffusing electrons by the back contact may be considerably reduced by a factor of 2 (depending on field across the film, width of the nitrogen layer, and boron doping level), thereby mitigating undesirable effects associated with trace amounts of boron.
Authors:
 [1] ; ;  [2] ;  [3]
  1. Naval Research Laboratory, Code 6854, Washington, DC 20375 (United States)
  2. Naval Research Laboratory, Code 6853, Washington, DC 20375 (United States)
  3. Naval Research Laboratory, Code 6178, Washington, DC 20375 (United States)
Publication Date:
OSTI Identifier:
22412879
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 21; Other Information: (c) 2015 U.S. Government; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; AMPLIFIERS; BORON; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; DIAMONDS; DOPED MATERIALS; ELECTRON BEAMS; ELECTRONS; LAYERS; NITROGEN; THIN FILMS