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Title: Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature

We present the study of optical and photoelectric properties of InAs quantum dots (QDs) grown on a metamorphic In{sub 0.15}Ga{sub 0.85}As buffer layer: such nanostructures show efficient light emission in the telecom window at 1.3 μm (0.95 eV) at room temperature. We prepared a sample with vertical geometry of contacts isolated from the GaAs substrate. The structure is found to be photosensitive in the spectral range above 0.9 eV at room temperature, showing distinctive features in the photovoltage and photocurrent spectra attributed to QDs, InAs wetting layer, and In{sub 0.15}Ga{sub 0.85}As metamorphic buffer, while a drop in the photoelectric signal above 1.36 eV is related to the GaAs layer. No effect of defect centers on the photoelectrical properties is found, although they are observed in the absorption spectrum. We conclude that metamorphic QDs have a low amount of interface-related defects close to the optically active region and charge carriers can be effectively collected into InAs QDs.
Authors:
 [1] ; ; ; ;  [2] ; ;  [3]
  1. Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, 03028 Kyiv (Ukraine)
  2. Institute of Materials for Electronics and Magnetism, CNR-IMEM, Parco delle Scienze 37a, I-43100 Parma (Italy)
  3. Department of Physics, Taras Shevchenko National University of Kyiv, 64 Volodymyrska St., 01601 Kyiv (Ukraine)
Publication Date:
OSTI Identifier:
22412878
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTRA; CHARGE CARRIERS; EV RANGE; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM COMPOUNDS; INTERFACES; LAYERS; PHOTOCURRENTS; QUANTUM DOTS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION