Effect of SnO{sub 2} concentration on the tuning of optical and electrical properties of ZnO-SnO{sub 2} composite thin films
Abstract
ZnO-SnO{sub 2} composite thin films have been deposited at 400 °C on glass substrates using targets of different SnO{sub 2} content (1 to 40 wt. %) by pulsed laser deposition technique. The structural, optical, and electrical properties of the composite films have been studied as a function of SnO{sub 2} content. It is revealed from X-ray diffraction analysis that films are crystalline in nature and the crystallite size decreases from 20–23 nm to 5–7 nm with increase of SnO{sub 2} content. X-ray photoelectron spectroscopy analysis indicates that Sn is predominantly doped into the ZnO lattice upto a SnO{sub 2} content of 15 wt. % in the composite. For higher concentration, a separate SnO{sub 2} phase is segregated in the composite. The band gap energy as well as the electrical conductivity can be tuned by varying the SnO{sub 2} content in the composite. Low temperature electrical conductivity measurements show three dominant conduction mechanisms in the temperature range of 20–300 K. At high temperature range of 200–300 K, thermal activation conduction process is dominant. Nearest neighbor hopping conduction mechanism, which occurs in the shallow impurity bands, is dominant in the temperature range of 90–200 K. In the low temperature range of 20–90 K, the electronic transport occurs through Mott's variable rangemore »
- Authors:
-
- Advanced Technology Development Centre, IIT Kharagpur 721 302 (India)
- Department of Metallurgical and Materials Engineering, IIT Kharagpur 721 302 (India)
- Publication Date:
- OSTI Identifier:
- 22412851
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPOSITE MATERIALS; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; ENERGY BEAM DEPOSITION; LASER RADIATION; PULSED IRRADIATION; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; TIN OXIDES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
Citation Formats
Rakshit, Tamita, Manna, Indranil, and Ray, Samit K., E-mail: physkr@phy.iitkgp.ernet.in. Effect of SnO{sub 2} concentration on the tuning of optical and electrical properties of ZnO-SnO{sub 2} composite thin films. United States: N. p., 2015.
Web. doi:10.1063/1.4905835.
Rakshit, Tamita, Manna, Indranil, & Ray, Samit K., E-mail: physkr@phy.iitkgp.ernet.in. Effect of SnO{sub 2} concentration on the tuning of optical and electrical properties of ZnO-SnO{sub 2} composite thin films. United States. https://doi.org/10.1063/1.4905835
Rakshit, Tamita, Manna, Indranil, and Ray, Samit K., E-mail: physkr@phy.iitkgp.ernet.in. 2015.
"Effect of SnO{sub 2} concentration on the tuning of optical and electrical properties of ZnO-SnO{sub 2} composite thin films". United States. https://doi.org/10.1063/1.4905835.
@article{osti_22412851,
title = {Effect of SnO{sub 2} concentration on the tuning of optical and electrical properties of ZnO-SnO{sub 2} composite thin films},
author = {Rakshit, Tamita and Manna, Indranil and Ray, Samit K., E-mail: physkr@phy.iitkgp.ernet.in},
abstractNote = {ZnO-SnO{sub 2} composite thin films have been deposited at 400 °C on glass substrates using targets of different SnO{sub 2} content (1 to 40 wt. %) by pulsed laser deposition technique. The structural, optical, and electrical properties of the composite films have been studied as a function of SnO{sub 2} content. It is revealed from X-ray diffraction analysis that films are crystalline in nature and the crystallite size decreases from 20–23 nm to 5–7 nm with increase of SnO{sub 2} content. X-ray photoelectron spectroscopy analysis indicates that Sn is predominantly doped into the ZnO lattice upto a SnO{sub 2} content of 15 wt. % in the composite. For higher concentration, a separate SnO{sub 2} phase is segregated in the composite. The band gap energy as well as the electrical conductivity can be tuned by varying the SnO{sub 2} content in the composite. Low temperature electrical conductivity measurements show three dominant conduction mechanisms in the temperature range of 20–300 K. At high temperature range of 200–300 K, thermal activation conduction process is dominant. Nearest neighbor hopping conduction mechanism, which occurs in the shallow impurity bands, is dominant in the temperature range of 90–200 K. In the low temperature range of 20–90 K, the electronic transport occurs through Mott's variable range hopping conduction process.},
doi = {10.1063/1.4905835},
url = {https://www.osti.gov/biblio/22412851},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 2,
volume = 117,
place = {United States},
year = {Wed Jan 14 00:00:00 EST 2015},
month = {Wed Jan 14 00:00:00 EST 2015}
}