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Title: Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiO{sub x}/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (V{sub bi} = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.
Authors:
; ; ;  [1] ;  [2] ;  [1] ;  [3]
  1. SHU-SolarE R and D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China)
  2. Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444 (China)
  3. (China)
Publication Date:
OSTI Identifier:
22412780
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; DOPED MATERIALS; ENERGY CONVERSION; HETEROJUNCTIONS; HOLES; INDIUM COMPOUNDS; INDIUM FLUORIDES; INDIUM OXIDES; LAYERS; N-TYPE CONDUCTORS; POTENTIALS; SILICON; SILICON OXIDES; SOLAR CELLS; SPUTTERING; TIN; TUNNEL EFFECT; WORK FUNCTIONS