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Title: Atomic layer deposition effect on the electrical properties of Al{sub 2}O{sub 3}-passivated PbS quantum dot field-effect transistors

We have investigated the effect of atomic layer deposition (ALD) on the electrical properties of colloidal PbS quantum dot field-effect transistors (PbS QD-FETs). Low-temperature Al{sub 2}O{sub 3} ALD process was used to fill up the pore spaces of PbS QD films containing 1, 2-ethanedithiol ligands. Upon deposition of Al{sub 2}O{sub 3} on PbS film, the PbS QD-FETs showed ambipolar behavior. The treated film retained this property for over 2 months, despite of exposure to air. This change in the electrical properties of the PbS QD-FETs is attributed to the formation of electron channels in the Al{sub 2}O{sub 3}-passivated PbS film. We conclude that these electron transport channels in the Al{sub x}O{sub y}-PbS film are formed due to substitution of the Pb sites by Al metal and chemical reduction of Pb{sup 2+} ions, as determined by an analysis of the depth profile of the film using secondary ion mass spectrometry and X-ray photoelectron spectroscopy.
Authors:
;  [1] ; ; ; ;  [1] ;  [2]
  1. Department of Nano Mechanics, Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-Ro, Yuseong-Gu, Daejeon 305-343 (Korea, Republic of)
  2. (UST), 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-333 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22412779
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM OXIDES; DEPOSITION; DITHIOLS; ELECTRIC CONDUCTIVITY; ELECTRONS; FIELD EFFECT TRANSISTORS; FILMS; LEAD IONS; LEAD SULFIDES; LIGANDS; MASS SPECTROSCOPY; QUANTUM DOTS; TEMPERATURE DEPENDENCE; X-RAY PHOTOELECTRON SPECTROSCOPY