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Title: Performance regeneration of InGaZnO transistors with ultra-thin channels

Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devices was also studied over a four month period.
Authors:
; ; ; ;  [1] ;  [1] ;  [2]
  1. School of Physics, Shandong University, Jinan 250100 (China)
  2. (United Kingdom)
Publication Date:
OSTI Identifier:
22412778
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; CARRIER MOBILITY; COMPARATIVE EVALUATIONS; DIAGRAMS; ELECTRIC POTENTIAL; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LAYERS; PERFORMANCE; PMMA; REGENERATION; SEMICONDUCTOR MATERIALS; THIN FILMS; TRANSISTORS; ZINC OXIDES