Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

Journal Article · Mon Mar 02 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913920· OSTI ID:22412776

Cobb, B. ^[1]

---

1. Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven (Netherlands)

Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

• OSTI ID: 22412776
• Journal Information: Applied Physics Letters, Vol. 106, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITORS
CARRIER MOBILITY
FERROELECTRIC MATERIALS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
POLARIZATION
SEMICONDUCTOR MATERIALS
THIN FILMS
TRANSISTORS
VOLATILITY
ZINC OXIDES