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Title: One-dimensional behavior and high thermoelectric power factor in thin indium arsenide nanowires

Electrical conductivity and Seebeck coefficient of quasi-one-dimensional indium arsenide (InAs) nanowires with 20 nm diameter are investigated. The carrier concentration of the passivated nanowires was modulated by a gate electrode. A thermoelectric power factor of 1.7 × 10{sup −3} W/m K{sup 2} was measured at room temperature. This value is at least as high as in bulk-InAs and exceeds by far typical values of thicker InAs nanowires with three-dimensional properties. The interpretation of the experimental results in terms of power-factor enhancement by one-dimensionality is supported by model calculations using the Boltzmann transport formalism.
Authors:
; ; ; ; ;  [1]
  1. IBM Research Zurich, Säumerstrasse 4, 8803 Rüschlikon (Switzerland)
Publication Date:
OSTI Identifier:
22412766
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BOLTZMANN EQUATION; CHARGE CARRIERS; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; ELECTRODES; INDIUM; INDIUM ARSENIDES; NANOWIRES; POWER FACTOR; SEEBECK EFFECT; TEMPERATURE RANGE 0273-0400 K; THERMOELECTRIC PROPERTIES; THREE-DIMENSIONAL LATTICES