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Title: Central role of electronic temperature for photoelectron charge and spin mobilities in p{sup +}-GaAs

The charge and spin mobilities of minority photoelectrons in p{sup +}-GaAs are determined by monitoring the effect of an electric field on the spatial profiles of the luminescence and of its polarization. By using electric fields to increase the photoelectron temperature T{sub e} without significantly changing the hole or lattice temperatures, the charge and spin mobilities are shown to be principally dependent on T{sub e}. For T{sub e} > 70 K, both the charge and spin mobilities vary as T{sub e}{sup −1.3}, while at lower temperatures this changes to an even more rapid T{sub e}{sup −4.3} law. This finding suggests that current theoretical models based on degeneracy of majority carriers cannot fully explain the observed temperature dependence of minority carrier mobility.
Authors:
; ;  [1] ; ;  [2]
  1. Physique de la Matière Condensée, Ecole Polytechnique, CNRS, 91128 Palaiseau (France)
  2. Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), University of Lille, CNRS, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d'Ascq (France)
Publication Date:
OSTI Identifier:
22412756
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC FIELDS; GALLIUM ARSENIDES; HOLES; LUMINESCENCE; PHOSPHORUS IONS; POLARIZATION; SPIN; TEMPERATURE DEPENDENCE