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Title: Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits

Indium oxide (In{sub 2}O{sub 3}) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm{sup 2}V{sup −1}s{sup −1} and 16 cm{sup 2}V{sup −1}s{sup −1} for coplanar and staggered architectures, respectively. Integration of In{sub 2}O{sub 3} transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In{sub 2}O{sub 3} also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In{sub 2}O{sub 3} transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.
Authors:
; ;  [1] ; ; ;  [2] ;  [3]
  1. Blackett Laboratory, Department of Physics and Centre for Plastic Electronics, Imperial College London, London SW7 2BW (United Kingdom)
  2. Electronics Laboratory, Swiss Federal Institute of Technology Zurich, Gloriastrasse 35, 8092 Zurich (Switzerland)
  3. Department of Physics, Laboratory of Applied Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)
Publication Date:
OSTI Identifier:
22412753
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; DEPOSITION; ELECTRIC POTENTIAL; ELECTRONS; FABRICATION; GAIN; INDIUM OXIDES; INTEGRATED CIRCUITS; PYROLYSIS; TEMPERATURE DEPENDENCE; THIN FILMS; TRANSISTORS