skip to main content

Title: Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m{sup 2}/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al{sub 2}O{sub 3}, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.
Authors:
; ;  [1] ; ;  [2] ;  [3]
  1. Institute of Solid State Physics, Chernogolovka, Moscow District 142432 (Russian Federation)
  2. Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan and National Nano Device Laboratories, Hsinchu 300, Taiwan (China)
  3. Physics Department, Northeastern University, Boston, Massachusetts 02115 (United States)
Publication Date:
OSTI Identifier:
22412752
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM OXIDES; ELECTRIC POTENTIAL; ELECTRON GAS; GERMANIUM SILICIDES; HETEROJUNCTIONS; QUANTUM WELLS; RANDOMNESS; SILICON; SILICON OXIDES; SMALL ANGLE SCATTERING; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL SYSTEMS