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Title: Improved carrier mobility of chemical vapor deposition-graphene by counter-doping with hydrazine hydrate

We developed a counter-doping method to tune the electronic properties of chemical vapor deposition (CVD)-grown graphene by varying the concentration and time of graphene exposure to hydrazine hydrate (N{sub 2}H{sub 4}·H{sub 2}O). The shift of G and 2D peaks of Raman spectroscopy is analyzed as a function of N{sub 2}H{sub 4}·H{sub 2}O concentration. The result revealed that N{sub 2}H{sub 4}·H{sub 2}O realized n-type doping on CVD grown graphene. X-ray photoelectron spectroscopy measurement proved the existence of nitrogen, which indicated the adsorption of N{sub 2}H{sub 4} on the surface of graphene. After counter-doping, carrier mobility, which was measured by Hall measurements, increased three fold.
Authors:
; ; ; ; ; ; ; ;  [1] ; ;  [2]
  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
  2. Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
Publication Date:
OSTI Identifier:
22412746
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ADSORPTION; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CONCENTRATION RATIO; GRAPHENE; HALL EFFECT; HYDRATES; HYDRAZINE; N-TYPE CONDUCTORS; RAMAN SPECTROSCOPY; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY