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Title: Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells

We systematically investigated the influence of nanoscale V-pits on the internal quantum efficiency (IQE) of InGaN multiple quantum wells (MQWs) by adjusting the underlying superlattices (SLS). The analysis indicated that high barrier energy of sidewall MQWs on V-pits and long diffusion distance between the threading dislocation (TD) center and V-pit boundary were crucial to effectively passivate the non-radiative centers of TDs. For a larger V-pit, the thicker sidewall MQW on V-pit would decrease the barrier energy. On the contrary, a shorter distance between the TD center and V-pit boundary would be observed in a smaller V-pit, which could increase the carrier capturing capability of TDs. An optimized V-pit size of approximately 200–250 nm in our experiment could be concluded for MQWs with 15 pairs SLS, which exhibited an IQE value of 70%.
Authors:
; ; ;  [1]
  1. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Rd., Hsinchu 300, Taiwan (China)
Publication Date:
OSTI Identifier:
22412739
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; APPROXIMATIONS; CAPTURE; CHARGE CARRIERS; DIFFUSION; DISLOCATIONS; INDIUM COMPOUNDS; QUANTUM EFFICIENCY; QUANTUM WELLS; SPECTROSCOPY; SUPERLATTICES