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Title: Direct evidence of void passivation in Cu(InGa)(SSe){sub 2} absorber layers

We have investigated the charge collection condition around voids in copper indium gallium sulfur selenide (CIGSSe) solar cells fabricated by sputter and a sequential process of selenization/sulfurization. In this study, we found direct evidence of void passivation by using the junction electron beam induced current method, transmission electron microscopy, and energy dispersive X-ray spectroscopy. The high sulfur concentration at the void surface plays an important role in the performance enhancement of the device. The recombination around voids is effectively suppressed by field-assisted void passivation. Hence, the generated carriers are easily collected by the electrodes. Therefore, when the S/(S + Se) ratio at the void surface is over 8% at room temperature, the device performance degradation caused by the recombination at the voids is negligible at the CIGSSe layer.
Authors:
; ; ; ; ; ; ; ; ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. PV Development Team, Energy Solution Business Division, Samsung SDI, 467 Beonyeong-ro, Seobuk-gu, Cheonan-si, Chungcheongnam-do 331-330 (Korea, Republic of)
  2. Core Technology Laboratory, Battery Research Center, Samsung SDI, 130 Samsung-ro, Yeongtong-gu Suwon-si, Gyeonggi-do 443-803 (Korea, Republic of)
  3. Analytical Engineering Group, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803 (Korea, Republic of)
  4. KUKIST Green School, Graduate School of Energy and Environment, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 136-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22412731
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; CHARGE COLLECTION; CONCENTRATION RATIO; COPPER COMPOUNDS; ELECTRIC CONTACTS; GALLIUM SELENIDES; INDIUM SULFIDES; LAYERS; PASSIVATION; RECOMBINATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; SPUTTERING; SURFACES; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY