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Title: Impedance analysis of Al{sub 2}O{sub 3}/H-terminated diamond metal-oxide-semiconductor structures

Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al{sub 2}O{sub 3} is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.
Authors:
 [1] ;  [2] ; ; ;  [3] ;  [4] ; ; ;  [1]
  1. School of Engineering and Applied Science, Aston University, Birmingham B4 7ET (United Kingdom)
  2. (Japan)
  3. Optical and Electronic Materials Unit, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 3050044 (Japan)
  4. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 3050044 (Japan)
Publication Date:
OSTI Identifier:
22412725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CAPACITANCE; COMPARATIVE EVALUATIONS; DIAMONDS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; HYDROGENATION; IMPEDANCE; INDUCTANCE; INTERFACES; MONOCRYSTALS; NUMERICAL ANALYSIS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SPECTROSCOPY; SURFACES; TEMPERATURE DEPENDENCE