Impedance analysis of Al{sub 2}O{sub 3}/H-terminated diamond metal-oxide-semiconductor structures

Journal Article · Mon Feb 23 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913597· OSTI ID:22412725

Liao, Meiyong ^[1]; Liu, Jiangwei; Imura, Masataka; Koide, Yasuo ^[2]; Sang, Liwen ^[3]; Coathup, David; Li, Jiangling; Ye, Haitao ^[1]

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1. School of Engineering and Applied Science, Aston University, Birmingham B4 7ET (United Kingdom)
2. Optical and Electronic Materials Unit, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 3050044 (Japan)
3. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 3050044 (Japan)

Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al{sub 2}O{sub 3} is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

• OSTI ID: 22412725
• Journal Information: Applied Physics Letters, Vol. 106, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
CAPACITANCE
COMPARATIVE EVALUATIONS
DIAMONDS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
EQUIVALENT CIRCUITS
HYDROGENATION
IMPEDANCE
INDUCTANCE
INTERFACES
MONOCRYSTALS
NUMERICAL ANALYSIS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPECTROSCOPY
SURFACES
TEMPERATURE DEPENDENCE