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Title: Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate

Silicon quantum dot (QD) devices with a proximal single-electron transistor (SET) charge sensor have been fabricated in a metal-oxide-semiconductor structure based on a silicon-on-insulator substrate. The charge state of the QDs was clearly read out using the charge sensor via the SET current. The lithographically defined small QDs enabled clear observation of the few-electron regime of a single QD and a double QD by charge sensing. Tunnel coupling on tunnel barriers of the QDs can be controlled by tuning the top-gate voltages, which can be used for manipulation of the spin quantum bit via exchange interaction between tunnel-coupled QDs. The lithographically defined silicon QD device reported here is technologically simple and does not require electrical gates to create QD confinement potentials, which is advantageous for the integration of complicated constructs such as multiple QD structures with SET charge sensors for the purpose of spin-based quantum computing.
Authors:
;  [1] ;  [1] ;  [2]
  1. Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22412718
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE STATES; COUPLING; DIFFUSION BARRIERS; ELECTRIC POTENTIAL; ELECTRONS; EXCHANGE INTERACTIONS; MOS TRANSISTORS; OXIDES; QUANTUM COMPUTERS; QUANTUM DOTS; QUBITS; READOUT SYSTEMS; SENSORS; SILICON; SPIN; SUBSTRATES