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Title: KOH based selective wet chemical etching of AlN, Al{sub x}Ga{sub 1−x}N, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and Al{sub x}Ga{sub 1−x}N (up to 12×) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations.
Authors:
; ; ; ; ; ; ;  [1] ;  [2]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)
  2. Adroit Materials, Apex, North Carolina 27539 (United States)
Publication Date:
OSTI Identifier:
22412700
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; CRYSTALS; DISLOCATIONS; DISSOLUTION; GALLIUM NITRIDES; LIGHT EMITTING DIODES; POTASSIUM HYDROXIDES; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; VISIBLE RADIATION