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Title: Sb surfactant mediated growth of InAs/AlAs{sub 0.56}Sb{sub 0.44} strained quantum well for intersubband absorption at 1.55 μm

Surfactant mediated growth of strained InAs/AlAs{sub 0.56}Sb{sub 0.44} quantum wells on InP (001) substrate is investigated. X ray diffraction and transmission electron microscopy analysis reveal that the supply of antimony on InAs surface delays the 2D to 3D growth transition and allows the growth of thick InAs/AlAsSb quantum wells. Quantum well as thick as 7 ML, without defect was achieved by Sb surfactant mediated growth. Further high resolution transmission electron microscopy measurement and geometric phase analysis show that InAs/AlAsSb interfaces are not abrupt. At InAs on AlAsSb interface, the formation of a layer presenting lattice parameter lower than InP leads to a tensile stress. From energetic consideration, the formation of As rich AlAsSb layer at interface is deduced. At AlAsSb on InAs interface, a compressive layer is formed. The impact on optical properties and the chemical composition of this layer are discussed from microscopic analysis and photoluminescence experiments.
Authors:
; ; ;  [1] ; ; ; ;  [2]
  1. Université Européenne de Bretagne, INSA, FOTON, UMR-CNRS 6082, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)
  2. CEMES CNRS-UPR8011, Université de Toulouse, 31055 Toulouse (France)
Publication Date:
OSTI Identifier:
22412688
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; ALUMINIUM ARSENIDES; ANTIMONIDES; CHEMICAL COMPOSITION; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; LATTICE PARAMETERS; LAYERS; OPTICAL PROPERTIES; PHASE STUDIES; PHOTOLUMINESCENCE; QUANTUM WELLS; STRAINS; STRESSES; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION