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Title: Thermal treatment-induced ductile-to-brittle transition of submicron-sized Si pillars fabricated by focused ion beam

Si pillars fabricated by focused ion beam (FIB) had been reported to have a critical size of 310–400 nm, below which their deformation behavior would experience a brittle-to-ductile transition at room temperature. Here, we demonstrated that the size-dependent transition was actually stemmed from the amorphous Si (a-Si) shell introduced during the FIB fabrication process. Once the a-Si shell was crystallized, Si pillars would behave brittle again with their modulus comparable to their bulk counterpart. The analytical model we developed has been proved to be valid in deriving the moduli of crystalline Si core and a-Si shell.
Authors:
; ; ;  [1]
  1. Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano) and Hysitron Applied Research Center in China (HARCC), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049 (China)
Publication Date:
OSTI Identifier:
22412686
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; BRITTLE-DUCTILE TRANSITIONS; COMPARATIVE EVALUATIONS; CRITICAL SIZE; CRYSTALS; DEFORMATION; DUCTILE-BRITTLE TRANSITIONS; FABRICATION; HEAT TREATMENTS; ION BEAMS; SILICON; TEMPERATURE RANGE 0273-0400 K