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Title: Effect of interfacial coupling on photocatalytic performance of large scale MoS{sub 2}/TiO{sub 2} hetero-thin films

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4913662· OSTI ID:22412684
 [1]; ; ;  [2];  [3]
  1. School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China)
  2. Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 3, Research Link, 117602 Singapore (Singapore)
  3. School of Science, Hebei University of Technology, Tianjin 300130 (China)

Interface electronic behavior of two-dimensional large scale MoS{sub 2}/TiO{sub 2} hetero-thin films has been studied using photoemission spectroscopy. We show a clear experimental evidence for type II band alignment and upward band bending (∼0.55 eV) at the interface of this system. The valence band offset at monolayer MoS{sub 2}/TiO{sub 2} interface was measured to be 2.15 eV, while the conduction band offset was 1.00 eV. The unique interface band positions introduce a strong build-in electric field for efficient electron-hole separation. In addition, thermal treatment results in better interfacial coupling and charge separation efficiency thus enhanced visible light photoactivity. Our results explicate the mechanism and emphasize its huge potential in visible light photocatalysis.

OSTI ID:
22412684
Journal Information:
Applied Physics Letters, Vol. 106, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English