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Title: Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell

We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.
Authors:
 [1] ;  [2] ;  [3] ; ; ;  [4] ; ; ; ;  [1] ;  [5] ;  [6] ;  [5] ;  [3] ;  [1] ;  [3] ;  [7] ;  [3]
  1. Laboratory for Photonics and Nanostructures (LPN–CNRS), Marcoussis 91460 (France)
  2. (IRDEP–CNRS), Chatou 78401 (France)
  3. (Japan)
  4. Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, Tokyo 153-8904 (Japan)
  5. NextPV, RCAST and CNRS, The University of Tokyo, Meguro-ku, Tokyo 153-8904 (Japan)
  6. (RCAST), The University of Tokyo, Meguro-ku, Tokyo 153-8904 (Japan)
  7. Institute of Research and Development on Photovoltaic Energy (IRDEP–CNRS), Chatou 78401 (France)
Publication Date:
OSTI Identifier:
22412677
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; COMPUTERIZED SIMULATION; ELECTRIC CONTACTS; EPITAXY; EXCITATION; GALLIUM ARSENIDES; GOLD; INDIUM ARSENIDES; LAYERS; MIRRORS; QUANTUM EFFICIENCY; QUANTUM WELLS; REFLECTION; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; VISIBLE RADIATION