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Title: Enhancing the pH sensitivity by laterally synergic modulation in dual-gate electric-double-layer transistors

The sensitivity of a standard ion-sensitive field-effect transistor is limited to be 59.2 mV/pH (Nernst limit) at room temperature. Here, a concept based on laterally synergic electric-double-layer (EDL) modulation is proposed in order to overcome the Nernst limit. Indium-zinc-oxide EDL transistors with two laterally coupled gates are fabricated, and the synergic modulation behaviors of the two asymmetric gates are investigated. A high sensitivity of ∼168 mV/pH is realized in the dual-gate operation mode. Laterally synergic modulation in oxide-based EDL transistors is interesting for high-performance bio-chemical sensors.
Authors:
 [1] ;  [2] ; ;  [3] ; ; ;  [1]
  1. School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)
  2. (China)
  3. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)
Publication Date:
OSTI Identifier:
22412669
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; FIELD EFFECT TRANSISTORS; INDIUM COMPOUNDS; MODULATION; PERFORMANCE; SENSITIVITY; SENSORS; TEMPERATURE RANGE 0273-0400 K; ZINC OXIDES