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Title: Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.
Authors:
; ; ;  [1] ; ;  [2] ;  [3] ;  [1] ;  [4] ;  [4]
  1. School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)
  2. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138 (United States)
  3. Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22412668
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; EPITAXY; ETCHING; GALLIUM ARSENIDES; LANTHANUM OXIDES; LAYERS; MOSFET; PERFORMANCE; SEMICONDUCTOR MATERIALS; SUBSTRATES