Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
Abstract
Atom probe tomography (APT) has been used to characterize the distribution of In atoms within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate produced using epitaxial lateral overgrowth. Application of the focused ion beam microscope enabled APT needles to be prepared from the low defect density regions of the grown sample. A complementary analysis was also undertaken on QWs having comparable In contents grown on polar c-plane sample pseudo-substrates. Both frequency distribution and modified nearest neighbor analyses indicate a statistically non-randomized In distribution in the a-plane QWs, but a random distribution in the c-plane QWs. This work not only provides insights into the structure of non-polar a-plane QWs but also shows that APT is capable of detecting as-grown nanoscale clustering in InGaN and thus validates the reliability of earlier APT analyses of the In distribution in c-plane InGaN QWs which show no such clustering.
- Authors:
- Publication Date:
- OSTI Identifier:
- 22412655
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 106; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; COMPARATIVE EVALUATIONS; DENSITY; EPITAXY; GALLIUM NITRIDES; INDIUM COMPOUNDS; ION MICROSCOPY; PROBES; QUANTUM WELLS; RANDOMNESS; SUBSTRATES; TOMOGRAPHY
Citation Formats
Tang, Fengzai, Zhu, Tongtong, Oehler, Fabrice, Fu, Wai Yuen, Griffiths, James T., Massabuau, Fabien C.-P., Kappers, Menno J., Oliver, Rachel A., E-mail: rao28@cam.ac.uk, Martin, Tomas L., Bagot, Paul A. J., and Moody, Michael P., E-mail: michael.moody@materials.ox.ac.uk. Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography. United States: N. p., 2015.
Web. doi:10.1063/1.4909514.
Tang, Fengzai, Zhu, Tongtong, Oehler, Fabrice, Fu, Wai Yuen, Griffiths, James T., Massabuau, Fabien C.-P., Kappers, Menno J., Oliver, Rachel A., E-mail: rao28@cam.ac.uk, Martin, Tomas L., Bagot, Paul A. J., & Moody, Michael P., E-mail: michael.moody@materials.ox.ac.uk. Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography. United States. https://doi.org/10.1063/1.4909514
Tang, Fengzai, Zhu, Tongtong, Oehler, Fabrice, Fu, Wai Yuen, Griffiths, James T., Massabuau, Fabien C.-P., Kappers, Menno J., Oliver, Rachel A., E-mail: rao28@cam.ac.uk, Martin, Tomas L., Bagot, Paul A. J., and Moody, Michael P., E-mail: michael.moody@materials.ox.ac.uk. 2015.
"Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography". United States. https://doi.org/10.1063/1.4909514.
@article{osti_22412655,
title = {Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography},
author = {Tang, Fengzai and Zhu, Tongtong and Oehler, Fabrice and Fu, Wai Yuen and Griffiths, James T. and Massabuau, Fabien C.-P. and Kappers, Menno J. and Oliver, Rachel A., E-mail: rao28@cam.ac.uk and Martin, Tomas L. and Bagot, Paul A. J. and Moody, Michael P., E-mail: michael.moody@materials.ox.ac.uk},
abstractNote = {Atom probe tomography (APT) has been used to characterize the distribution of In atoms within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate produced using epitaxial lateral overgrowth. Application of the focused ion beam microscope enabled APT needles to be prepared from the low defect density regions of the grown sample. A complementary analysis was also undertaken on QWs having comparable In contents grown on polar c-plane sample pseudo-substrates. Both frequency distribution and modified nearest neighbor analyses indicate a statistically non-randomized In distribution in the a-plane QWs, but a random distribution in the c-plane QWs. This work not only provides insights into the structure of non-polar a-plane QWs but also shows that APT is capable of detecting as-grown nanoscale clustering in InGaN and thus validates the reliability of earlier APT analyses of the In distribution in c-plane InGaN QWs which show no such clustering.},
doi = {10.1063/1.4909514},
url = {https://www.osti.gov/biblio/22412655},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 106,
place = {United States},
year = {Mon Feb 16 00:00:00 EST 2015},
month = {Mon Feb 16 00:00:00 EST 2015}
}