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Title: Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

The authors report compact and chemically homogeneous In-rich InGaN layers directly grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical quality is evidenced by transmission electron microscopy, near-field scanning optical microscopy, and X-ray diffraction. Photoluminescence emission in the near-infrared is observed up to room temperature covering the important 1.3 and 1.55 μm telecom wavelength bands. The n-InGaN/p-Si interface is ohmic due to the absence of any insulating buffer layers. This qualitatively extends the application fields of III-nitrides and allows their integration with established Si technology.
Authors:
; ; ; ;  [1] ; ; ;  [2] ;  [2] ;  [3] ;  [4] ;  [5] ;
  1. Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
  2. Departamente Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Facultad de Ciencias, Universidad de Cádiz, Puerto Real, 11510 Cádiz (Spain)
  3. (Spain)
  4. Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany)
  5. Institute of Physics and Center of Interface Science, Carl von Ossietzky Universität Oldenburg, Ammerländer Heerstr. 114-118, 26129 Oldenburg (Germany)
Publication Date:
OSTI Identifier:
22412653
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; GALLIUM NITRIDES; INDIUM COMPOUNDS; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; N-TYPE CONDUCTORS; PHOTOLUMINESCENCE; PLASMA; P-TYPE CONDUCTORS; SCANNING LIGHT MICROSCOPY; SILICON; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; WAVELENGTHS; X-RAY DIFFRACTION