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Title: Strain and lattice orientation distribution in SiN/Ge complementary metal–oxide–semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy

This paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution x-ray micro-diffraction. The recently developed model-free characterization tool, based on a quick scanning x-ray diffraction microscopy technique can image strain down to levels of 10{sup −5} (Δa/a) with a spatial resolution of ∼0.5 μm. Strain and lattice tilt are extracted using the strain and orientation calculation software package X-SOCS. The obtained results are compared with the biaxial strain distribution obtained by lattice parameter-sensitive μ-Raman and μ-photoluminescence measurements. The experimental data are interpreted with the help of finite element modeling of the strain relaxation dynamics in the investigated structures.
Authors:
;  [1] ; ; ; ; ;  [2] ;  [1] ;  [3] ;  [2] ;  [4]
  1. European Synchrotron ESRF, Grenoble 38043 (France)
  2. IHP-Leibniz Institute for Innovative Microelectronics, Frankfurt (Germany)
  3. (France)
  4. (Germany)
Publication Date:
OSTI Identifier:
22412649
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; LATTICE PARAMETERS; MICROSCOPY; MICROSTRUCTURE; ORIENTATION; PHOTOLUMINESCENCE; RELAXATION; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; SPATIAL DISTRIBUTION; SPATIAL RESOLUTION; STRAINS; VISIBLE RADIATION; X-RAY DIFFRACTION