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Title: Multi-mode interference revealed by two photon absorption in silicon rich SiO{sub 2} waveguides

Photoluminescence (PL) from Si nanocrystals (NCs) excited by two-photon absorption (TPA) has been observed in Si nanocrystal-based waveguides fabricated by plasma enhanced chemical vapor deposition. The TPA excited photoluminescence emission resembles the one-photon excited photoluminescence arising from inter-band transitions in the quantum confined Si nanocrystals. By measuring the non-linear transmission of waveguides, a large TPA coefficient of β up to 10{sup −8 }cm/W has been measured at 1550 nm. These values of β depend on the Si NCs size and are two orders of magnitude larger than the bulk silicon value. Here, we propose to use the TPA excited visible PL emission as a tool to map the spatial intensity profile of the 1550 nm propagating optical modes in multimode waveguides. In this way, multimode interference has been revealed experimentally and confirmed through a finite element simulation.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Nanoscience Laboratory, Dept. Physics, University of Trento, Via Sommarive 14, Povo, I-38050 Trento (Italy)
  2. Centre for Materials and Microsystems, Fondazione Bruno Kessler, via Sommarive 18, 318123 Povo (Trento) (Italy)
Publication Date:
OSTI Identifier:
22412644
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CHEMICAL VAPOR DEPOSITION; EMISSION SPECTRA; FINITE ELEMENT METHOD; INTERFERENCE; NANOSTRUCTURES; OPTICAL MODES; PHOTOLUMINESCENCE; PHOTONS; SILICON; SILICON OXIDES; WAVEGUIDES