Multi-mode interference revealed by two photon absorption in silicon rich SiO{sub 2} waveguides
- Nanoscience Laboratory, Dept. Physics, University of Trento, Via Sommarive 14, Povo, I-38050 Trento (Italy)
- Centre for Materials and Microsystems, Fondazione Bruno Kessler, via Sommarive 18, 318123 Povo (Trento) (Italy)
Photoluminescence (PL) from Si nanocrystals (NCs) excited by two-photon absorption (TPA) has been observed in Si nanocrystal-based waveguides fabricated by plasma enhanced chemical vapor deposition. The TPA excited photoluminescence emission resembles the one-photon excited photoluminescence arising from inter-band transitions in the quantum confined Si nanocrystals. By measuring the non-linear transmission of waveguides, a large TPA coefficient of β up to 10{sup −8 }cm/W has been measured at 1550 nm. These values of β depend on the Si NCs size and are two orders of magnitude larger than the bulk silicon value. Here, we propose to use the TPA excited visible PL emission as a tool to map the spatial intensity profile of the 1550 nm propagating optical modes in multimode waveguides. In this way, multimode interference has been revealed experimentally and confirmed through a finite element simulation.
- OSTI ID:
- 22412644
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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